کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753444 895529 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Normally-off 4H-SiC trench-gate MOSFETs with high mobility
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Normally-off 4H-SiC trench-gate MOSFETs with high mobility
چکیده انگلیسی

A new 4H-SiC trench-gate MOSFET structure with epitaxial buried channel for accumulation-mode operation, has been designed and fabricated, aiming at improving channel electron mobility. Coupled with improved fabrication processes, the MOSFET structure eliminates the need of high dose N+ source implantation. High dose N+ implantation requires high-temperature (⩾1550 °C) activation annealing and tends to cause substantial surface roughness, which degrades MOSFET threshold voltage stability and gate oxide reliability. The buried channel is implemented without epitaxial regrowth or accumulation channel implantation. Fabricated MOSFETs subject to ohmic contact rapid thermal annealing at 850 °C for 5 min exhibit a high peak field-effect mobility (μFE) of 95 cm2/V s at room temperature (25 °C) and 255 cm2/V s at 200 °C with stable normally-off operation from 25 °C to 200 °C. The dependence of channel mobility and threshold voltage on the buried channel depth is investigated and the optimum range of channel depth is reported.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 6, June 2008, Pages 909–913
نویسندگان
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