Device structures and carrier transport properties of advanced CMOS using high mobility channels

Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III–V materials are reviewed. These carrier transport enhancement technologies can be classified into three categories; global enhancement techniques, local enhancement techniques and global/local-merged techniques. We present our recent results on MOSFETs using these three types of the technologies with an emphasis on the global strained-Si/SiGe/Ge substrates and the combination with the local techniques. Finally, issues on device structures merged with III–V materials are briefly described.