کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753479 895533 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides
چکیده انگلیسی
In this paper, a detailed investigation of the low frequency noise in biaxially strained-Si technology has been conducted. The noise behavior is described and compared with the results obtained on ultrathin oxide MOSFETs in an advanced silicon technology. The drain current noise measurements are interpreted by carrier number fluctuation noise models. The extracted oxide trap density is more important for the studied strained-Si devices. Finally, the important excess noise observed in the longest geometries is attributed to the gate-leakage current noise contribution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 4, April 2007, Pages 633-637
نویسندگان
, , , , ,