کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753489 | 895538 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The carrier mobility in ultrathin SOI MOSFETs with thin SiO2 gate oxide is investigated by comparing the front and back channels. The front-gate split CV method is used at large substrate voltages to determine the carrier density and mobility in the back channel. The implementation of the split CV technique in ultrathin SOI films is described. This method is also efficient for determining the threshold voltage of the back channel. The accuracy as well as the limitations of the technique are discussed. Systematic experiments are presented for advanced n-channel and p-channel SOI MOSFETs. The results confirm that the mobility in the front channel is smaller than that in the back channel.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 2, February 2007, Pages 245–251
Journal: Solid-State Electronics - Volume 51, Issue 2, February 2007, Pages 245–251
نویسندگان
A. Ohata, M. Cassé, S. Cristoloveanu,