Channel electron mobility in 4H–SiC lateral junction field effect transistors

Interface defects have limited 4H–SiC MOS-based FET channel mobility to less than 40–50 cm2/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm2/V s for 4H–SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed.