کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753627 | 895556 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An accurate and compact large signal model for III–V HBT devices
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An accurate and compact large signal model is proposed for modeling heterojunction bipolar transistors (HBTs) based on III–V materials. In DC mode, the model includes self-heating, Kirk and Early effects, as well as the temperature dependence of the model parameters. In small signal mode, the model captures the variation of various AC parameters with bias. The procedure of extracting the model parameters uses DC and multiple bias S-parameter measurements. The model is compiled in the HP–ADS circuit simulator as user-compiled model and is verified by comparing its simulations to measurements in all modes of operation for an AlGaAs/GaAs transistor with an emitter area of 2 × 25 μm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 12, December 2005, Pages 1909–1916
Journal: Solid-State Electronics - Volume 49, Issue 12, December 2005, Pages 1909–1916
نویسندگان
A. Issaoun, F.M. Ghannouchi, A.B. Kouki,