Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

In this paper, we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route in the condition of low temperature and atmospheric environment, which possesses a low leakage current, high capacitance, and low surface roughness. With silica film (∼50 nm), high performance and low voltage (<4 V) p-/n-type organic transistors are fabricated. This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving, time-saving and easy to operate.