کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7714459 | 1497439 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultrawide photoresponse in ZnO/ZnSe coaxial nanowires with a threshold of 0.8Â eV
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanostructured wide-bandgap semiconductors have great potential for photocatalytic applications because of their high stability and photocatalytic ability in aqueous solution. However, these materials are poor absorbers of photons in the solar spectrum and yield modest conversion efficiencies. This work demonstrates that photoresponse can be widely extended by strain-induced modification in ZnO/ZnSe coaxial nanowires. An ultrawide photoresponse was theoretically predicted with threshold ranging from 0.4Â eV to 1.8Â eV in ultrathin nanowires because of the large core strain. The lowest photoresponse threshold of 0.82Â eV was observed in the experiment, which almost covered up to 94% of solar power. This result suggested that an unusually high utilization ratio of solar light was achieved. This work provided a strategy to design and develop a stable and efficient photocatalyst based on wide-bandgap semiconductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 34, 14 September 2015, Pages 10788-10794
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 34, 14 September 2015, Pages 10788-10794
نویسندگان
Weiping Wang, Yiyan Cao, Zhiming Wu, Jialun He, Qiang Luo, Waseem Ahmed Bhutto, Heng Li, Yuhua Wen, Jing Li, Shuping Li, Junyong Kang,