کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7717415 1497472 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device
چکیده انگلیسی
An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H2/air), a high sensing response speed (7 s), a lower operating temperature (≦350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 1, 5 January 2015, Pages 729-734
نویسندگان
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