کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7717415 | 1497472 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ÎR/R)), an extremely low detecting limit (<50 ppm H2/air), a high sensing response speed (7 s), a lower operating temperature (â¦350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 1, 5 January 2015, Pages 729-734
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 1, 5 January 2015, Pages 729-734
نویسندگان
Po-Cheng Chou, Huey-Ing Chen, I-Ping Liu, Chun-Chia Chen, Jian-Kai Liou, Kai-Siang Hsu, Wen-Chau Liu,