کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7717793 | 1497474 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes](/preview/png/7717793.png)
چکیده انگلیسی
A Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) structure is used to fabricate interesting Schottky diode-type hydrogen sensors. The employment of SiO2-NPs could effectively increase the specific surface area of Pd catalytic metal and the Schottky barrier height. Good hydrogen sensing performance is obtained. Experimentally, as compared to a conventional Pd/AlGaN MS diode, a significant 34.5-fold improvement on hydrogen sensing response is obtained under an introduced 1% H2/air gas at 300 K when a 10 wt% concentration of SiO2-NPs is employed in the studied device. Yet, the increase in SiO2-NP concentration relatively deteriorates the ability to detect very low hydrogen concentration levels (â¦1 ppm H2/air). In addition, the increase in SiO2-NP concentration creates a decrease and increase on response and recovery time constants of transient behaviors, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 39, Issue 35, 3 December 2014, Pages 20313-20318
Journal: International Journal of Hydrogen Energy - Volume 39, Issue 35, 3 December 2014, Pages 20313-20318
نویسندگان
Po-Cheng Chou, Huey-Ing Chen, I.-Ping Liu, Chun-Chia Chen, Jian-Kai Liou, Cheng-Jing Lai, Wen-Chau Liu,