کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7723099 | 1497523 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Gallium-doped tungsten trioxide thin film photoelectrodes for photoelectrochemical water splitting
ترجمه فارسی عنوان
دی اکسید کربن تنگستن تری گلیکول گالیم تیتانیوم برای الکترودهای الکترومغناطیسی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
چکیده انگلیسی
A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 °C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 38, Issue 22, 26 July 2013, Pages 9585-9591
Journal: International Journal of Hydrogen Energy - Volume 38, Issue 22, 26 July 2013, Pages 9585-9591
نویسندگان
Kim Hang Ng, Lorna Jeffery Minggu, Mohammad B. Kassim,