کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7746400 | 1498280 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical conductivity of Gd-doped ceria film at low temperatures (300-500 °C)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical conductivity of Gd-doped ceria film at low temperatures (300-500 °C) Electrical conductivity of Gd-doped ceria film at low temperatures (300-500 °C)](/preview/png/7746400.png)
چکیده انگلیسی
Gd-doped ceria (GDC, Ce1 â xGdxO2 â δ, x = 0.14-0.16) thin-films were deposited on sapphire substrate by RF-magnetron sputtering and their electrical conductivities of films were measured as a function of temperature (T = 300-500 °C) and oxygen partial pressure (Po2). All films showed columnar grains with crystallite size of 18-36 nm. The films annealed at high temperature and deposited from dense target exhibited their ionic conductivities similar to or higher than bulk GDC. The electronic conductivities of GDC films shown in low Po2 range, however, were higher than that of bulk GDC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 262, 1 September 2014, Pages 411-415
Journal: Solid State Ionics - Volume 262, 1 September 2014, Pages 411-415
نویسندگان
Sun Woong Kim, Younki Lee, Gyeong Man Choi,