Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation

Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 453, 30 September 2018, Pages 48-55

Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, Hyun-Yong Yu,