کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7835346 | 1503532 | 2018 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Changes of electronic properties of p-GaN(0â¯0â¯0â¯1) surface after low-energy N+-ion bombardment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The p-GaN(0â¯0â¯0â¯1) crystal with a relatively low acceptor concentration of 5â¯Ãâ¯1016â¯cmâ3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0â¯0â¯0â¯1)-(1â¯Ãâ¯1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200â¯eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2â¯eV to 3.2â¯eV, as well as an increase of band bending at the vacuum/surface interface from 1.4â¯eV to 2.5â¯eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 440, 15 May 2018, Pages 547-552
Journal: Applied Surface Science - Volume 440, 15 May 2018, Pages 547-552
نویسندگان
M. Grodzicki, P. Mazur, A. Ciszewski,