Electron-beam writing of deoxygenated micro-patterns on graphene oxide film

Electron-beam (e-beam) lithography at a low energy can efficiently write deoxygenated micro-patterns on graphene oxide (GO) films with high edge-definition. The deoxygenation caused by the secondary process of back-scattered electrons leads to a shrinkage of pattern height. A lower energy e-beam is found to be more effective in deoxygenating of GO than that by using a higher energy e-beam. The thickness and the oxygen-to-carbon atomic ratio of the pattern are strongly related that decreases progressively with increasing the electron dosage before reaching a steady level. In addition, as the electron dose increases the patterned area also expanded in lateral direction. The observations of the proximity effect are justified with our results and the Monte Carlo simulation of electrons trajectories. These results can be a guideline for the fabrication of all-carbon thin film electronics.