کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7851580 | 1508854 | 2015 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Raman signature of defected twisted bilayer graphene
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
چکیده انگلیسی
Layered two-dimensional crystal systems can exhibit complex interlayer interactions, which are influenced by local crystal structure and/or electronic variations. Here, we study the influence of defects in twisted bilayer graphene (TBG) using Raman spectroscopy. We explore the varied influence of defects on three characteristic Raman modes of both fully-defected TBG, with defects introduced in both layers, and half-defected TBG, with defects introduced in only a single layer. The resonance condition responsible for a strong enhancement of the G peak is sensitive to structural disorder and is quenched within a radius â¼3Â nm of defects, while the twist-angle dependence of the 2D peak is influenced only at the site of structural disorder (â¼1Â nm radius).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 93, November 2015, Pages 250-257
Journal: Carbon - Volume 93, November 2015, Pages 250-257
نویسندگان
Scott W. Schmucker, Cory D. Cress, James C. Culbertson, Jeffrey W. Beeman, Oscar D. Dubon, Jeremy T. Robinson,