کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7853346 | 1508871 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Semiconducting amorphous carbon thin films for transparent conducting electrodes
ترجمه فارسی عنوان
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
چکیده انگلیسی
Semiconducting amorphous carbon thin films were directly grown on SiO2 substrate by using chemical vapor deposition. Raman spectra and transmission electron microscopy image showed that the a-C films have a short-range ordered amorphous structure. The electrical and optical properties of the a-C thin films were investigated. The films have sheet resistance of 3.7 kΩ/â¡ and high transmittance of 82%. They exhibit metal-oxide-semiconductor field effect transistor mobility of 10-12 cm2 Vâ1 sâ1 at room temperature, which is comparable to previous reported mobility of amorphous carbon. The optical band gap was calculated by Tauc's relationship and photoluminescence spectra showed that the films are semiconductor with an optical band gap of 1.8 eV. These good physical properties make the a-C films a candidate for the application of transparent conducting electrodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 76, September 2014, Pages 64-70
Journal: Carbon - Volume 76, September 2014, Pages 64-70
نویسندگان
Rizwan Ur Rehman Sagar, Xiaozhong Zhang, Chengyue Xiong, Yi Yu,