کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7853442 1508871 2014 25 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Identifying atomic sites in N-doped pristine and defective graphene from ab initio core level binding energies
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
Identifying atomic sites in N-doped pristine and defective graphene from ab initio core level binding energies
چکیده انگلیسی
Theoretical calculations have been carried out to predict N(1s) binding energy values in N-doped graphene which take into account initial and final state effects. A simple way to carry out ΔSCF Hartree-Fock calculations is proposed, validated against experiment for a series of N-containing organic molecules and applied to realistic N-doped nanosized pristine and defective graphene models. Final state effects appear to be important and strongly suggest that only two types of N are likely to be detected on N-doped pristine graphene by X-ray Photoelectron Spectroscopy with binding energy values of 398.6 and 400.5 eV, respectively and relative to C(1s) at 285 eV in agreement to recent experiments for quasi free standing N-doped graphene. Two cases of N-doping in defective graphene have also been considered and calculated results compared with recent experimental measurements. Calculated values for C(1s) including final state effects strongly suggests that values for core level binding energy of N and other dopants will be close to their absolute values if referred to C(1s) at 290.2 eV. The proposed approach is general enough to be successfully applied to other cases of interest.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 76, September 2014, Pages 155-164
نویسندگان
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