کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7853624 | 1508873 | 2014 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of single and multi-layer graphene on Ir(1Â 0Â 0)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the high temperature chemical vapor deposition of ethylene on Ir(1Â 0Â 0) and the resulting development of single and multi-layer graphene films. By employing X-ray photoemission electron spectromicroscopy, low energy electron microscopy and related microprobe methods, we investigate nucleation and growth of graphene as a function of the concentration of the chemisorbed carbon lattice gas. Further, we characterize the morphology and crystal structure of graphene as a function of temperature, revealing subtle changes in bonding occurring upon cooling from growth to room temperature. We also identify conditions to grow multi-layer flakes. Their thickness, unambiguously determined through the analysis of the intensity of the Ir 4f and C 1s emission, is correlated to the electron reflectivity at very low kinetic energy. The effective attenuation length of electrons in few-layer graphene is estimated to be 4.4 and 8.4Â Ã
at kinetic energies of 116 and 338Â eV, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 74, August 2014, Pages 237-248
Journal: Carbon - Volume 74, August 2014, Pages 237-248
نویسندگان
Andrea Locatelli, Giovanni Zamborlini, Tevfik Onur MenteÅ,