Improved field emission properties of carbon nanotubes decorated with Ta layer

The field emission (FE) properties of vertically aligned carbon nanotube (CNT) arrays having a surface decorated with Ta layer were investigated. The CNTs with 6 nm thickness of Ta decoration showed improved FE properties with a low turn-on field of 0.64 V/μm at 10 μA/cm2, a threshold field of 1.06 V/μm at 1 mA/cm2 and a maximum current density of 7.61 mA/cm2 at 1.6 V/μm. After Ta decoration, the increased emission centres and/or defect sites on the surface of CNTs improved the field enhancement factor. The work function of CNTs with Ta decoration measured with ultraviolet photoelectron spectroscopy decreased from 4.74 to 4.15 eV with increasing Ta thickness of 0-6 nm. The decreased work function and increased field enhancement factor were responsible for the improved FE properties of the vertically aligned CNTs. Moreover, a significant hysteresis in the cycle-testing of the current density with rising and falling electric field process was observed and attributed to the adsorption/desorption effect, as confirmed by the photoelectron spectrum.