Microstructure and growth mechanism of multi-layer graphene standing on polycrystalline SiC microspheres

Multi-layer graphene standing on polycrystalline SiC microspheres was prepared by pyrolyzing liquid polysilacarbosilane. The lateral dimension of the multi-layer graphene is ∼100 nm and the average diameter of the microspheres is ∼0.9 μm. The growth of the multi-layer graphene is proposed to be initiated by phase separation of the microspheres, and facilitated with both crystallization inside and chemical vapor deposition outside. This method offers an alternative way to prepare multi-layer graphene on SiC without the need for 4H- or 6H-SiC crystals.