کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7855560 | 1508882 | 2013 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of integrity of graphene transferred by interface energy modulation
ترجمه فارسی عنوان
افزایش یکپارچگی گرافن انتقال داده شده توسط مدولاسیون انرژی رابط
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
چکیده انگلیسی
We report on the systematic studies of the parameters governing the integrity of graphene film during general “wet” transfer from a thermodynamic point of view. We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graphene transfer from a catalyst film to a desired substrate without defects. When parameterizing the conventional chemical properties of solvents, the boiling points and surface tension were found to be critical in determining the quality of the transferred graphene. During the formation step of a conformal PS film on a graphene surface before catalyst etching, a solvent with a boiling point over â¼140 °C was essential. During the following PS film removal step, a solvent with surface tension higher than approximately 29 dyn/cm led to the formation of a continuous graphene film without cracks and holes. In addition, a high spin-coating velocity and lower concentration of PS in the solvent enhanced the quality of a transferred graphene film. The UV treatment of Si/SiO2 (100 nm) was also found to improve the adhesion of the graphene on substrates. By electrical characterization, morphological differences were found to affect the electrical properties markedly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 65, December 2013, Pages 165-174
Journal: Carbon - Volume 65, December 2013, Pages 165-174
نویسندگان
Un Jeong Kim, Jaehyun Hur, Sangmo Cheon, Dae-Young Chung, Hyungbin Son, Yeonsang Park, Young-Geun Roh, Jineun Kim, Jaesoong Lee, Sang Won Kim, Kyuhyun Im, Nokyoung Park, Juhun Kim, Sungwoo Hwang, Wanjun Park, Chang-Won Lee,