کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7887669 | 1509790 | 2018 | 41 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-temperature thermoelectric properties of polycrystalline CaMn1-xNbxO3-δ
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The structural and thermoelectric (TE) properties of polycrystalline CaMn1-xNbxO3-δ (0.025â¯â¤â¯xâ¯â¤â¯0.25) were studied with X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and electrical transport measurements, with an emphasis placed on the Nb5+ content. The CaMn1-xNbxO3-δ crystallized in an orthorhombic perovskite structure of the Pnma space group. The density and grain size of the CaMn1-xNbxO3-δ samples gradually decreased when Nb5+ ions substituted Mn4+ ions. The CaMn0.95Nb0.05O3-δ sample contained charge-ordered domains, stacking faults, and micro-twins. The substitution of Nb5+ for Mn4+ up to xâ¯=â¯0.15 led to an increase in electrical conductivity, mainly due to an increased electron concentration. The CaMn1-xNbxO3-δ samples with low Nb5+ contents (0.025â¯â¤â¯xâ¯â¤â¯0.15) showed metallic behavior, whereas those with high Nb5+ contents (0.2â¯â¤â¯xâ¯â¤â¯0.25) showed semiconducting behavior. The Nb5+ substitution lowered the absolute value of the Seebeck coefficient for the CaMn1-xNbxO3-δ samples due to an increased electron concentration. The largest power factor (1.19â¯Ãâ¯10â4 Wâ¯mâ1 Kâ2) was obtained for CaMn0.95Nb0.05O3-δ at 800â¯Â°C. The partial substitution of Nb5+ for Mn4+ in CaMnO3-δ proved to be highly effective for improving high-temperature TE properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 8, 1 June 2018, Pages 9204-9214
Journal: Ceramics International - Volume 44, Issue 8, 1 June 2018, Pages 9204-9214
نویسندگان
J.W. Seo, G.H. Kim, S.-M. Choi, K. Park,