کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7898177 | 1510132 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Large energy storage density, low energy loss and highly stable (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O3 antiferroelectric thin-film capacitors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, high performance (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O3 polycrystalline antiferroelectric thin-film was successfully fabricated on (La0.7Sr0.3)MnO3/Al2O3(0001) substrate via a cost-effectively chemical solution method. A large recoverable energy storage density (Wre) of 46.3â¯J/cm3 and high efficiency (η) of 84% were realized simultaneously under an electric field of 4â¯MV/cm by taking full advantage of the linear dielectric response after the electric field induced antiferroelectric-ferroelectric transition. Moreover, the PLZST thin-film displayed high temperature stability. With increasing temperature from 300â¯K to 380â¯K, the Wre decreased only 1.3%. The film also exhibited good fatigue endurance up to 1â¯Ãâ¯105 cycling under an electric field of 2.2â¯MV/cm. Our work underlines the importance of the interface quality between the film and the substrate and the important role of linear dielectric answer after saturation in the improvement of the energy storage density and efficiency of antiferroelectric materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 38, Issue 9, August 2018, Pages 3177-3181
Journal: Journal of the European Ceramic Society - Volume 38, Issue 9, August 2018, Pages 3177-3181
نویسندگان
Zhengjie Lin, Ying Chen, Zhen Liu, Genshui Wang, Denis Rémiens, Xianlin Dong,