کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7908053 | 1510759 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Towards metal chalcogenide nanowire-based colour-sensitive photodetectors
ترجمه فارسی عنوان
به عکس های فوتوالکتریک حساس به نور رنگی مبتنی بر نانوسیم های فلزی متال
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
چکیده انگلیسی
In recent years, nanowires have been shown to exhibit high photosensitivities, and, therefore are of interest in a variety of optoelectronic applications, for example, colour-sensitive photodetectors. In this study, we fabricated two-terminal PbS, In2S3, CdS and ZnSe single-nanowire photoresistor devices and tested applicability of these materials under the same conditions for colour-sensitive (405Â nm, 532Â nm and 660Â nm) light detection. Nanowires were grown via atmospheric pressure chemical vapour transport method, their structure and morphology were characterized by scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), and optical properties were investigated with photoluminescence (PL) measurements. Single-nanowire photoresistors were fabricated via in situ nanomanipulations inside SEM, using focused ion beam (FIB) cutting and electron-beam-assisted platinum welding; their current-voltage characteristics and photoresponse values were measured. Applicability of the tested nanowire materials for colour-sensitive light detection is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 75, January 2018, Pages 501-507
Journal: Optical Materials - Volume 75, January 2018, Pages 501-507
نویسندگان
Edgars Butanovs, Jelena Butikova, Aleksejs Zolotarjovs, Boris Polyakov,