کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7922376 | 1511759 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Residual stress gradient of Cr and CrN thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work Cr, CrN thin films were grown by the Magnetron Sputtering technique on monocrystalline silicon (400) substrates. Also, a (Cr/CrN)2 multilayer film was grown in order to compare the values of stress between multilayer and single layers. The total thickness of all films was approximately equal to 1 μm. Structural characterization and residual stress measurements were performed by the grazing X-ray diffraction method and the data were collected at LNLS - Brazilian Synchrotron Light Laboratory. Different angles of incidence were selected in order to obtain values of residual stress at different penetration depths. A linear model of residual stress as a function of the depth profile from experimental data was obtained by using the Laplace transform. Results indicate smaller tensile residual stress at surface and higher stresses at film/substrate interface for the Cr monolayer and for the CrN phase in the (Cr/CrN)2 multilayer. On the contrary, the CrN film presented higher tensile stresses at surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 204, 15 January 2018, Pages 269-276
Journal: Materials Chemistry and Physics - Volume 204, 15 January 2018, Pages 269-276
نویسندگان
D.F. Arias, A. Gómez, R.M. Souza, J.M. Vélez,