کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7923035 1511801 2015 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of ruthenium thin film and characterization of its chemical mechanical polishing process
ترجمه فارسی عنوان
ساخت فیلم نازک روتنیم و مشخص کردن فرایند مکانیکی شیمیایی مکانیکی آن
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
The fabrication of Ru thin film is conducted on titanium (Ti)-based rotating disk electrodes (RDE) by electrodeposition and characteristics of its chemical mechanical polishing (CMP) are investigated to be employed for copper diffusion layer applications in various semiconductor-device interconnects. The electrodeposits obtained under different electrodeposition conditions are characterized using atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). Experimental results indicate that the Ru electrodeposition exhibits a Tafel behavior with a 2e metal ion reduction process. Both exchange current density and cathodic transfer coefficient are determined. A quasi Koutecky-Levich analysis is proposed to analyze the electrodeposition processes under different applied current density conditions and the activation overpotentials together with electrodeposition rate constants are obtained. For Ru CMP operations, slurries containing metal-free 2wt% ammonium persulfate and 2wt% silica abrasive at various pH values are employed. Potentiodynamic polarization studies indicate that the corrosion current density varies in the presence of ammonia while the static etch rate remains low. Both chemical and mechanical effects are investigated and analyzed, and the CMP efficacy factors are obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 162, 15 July 2015, Pages 477-486
نویسندگان
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