Effect of Si-die dimensions on electromigration failure time of flip-chip solder joints

► Si-die thickness has profound influence on electro-migration lifetime. The average failure time was 1608.0 h for joints with a 760-μm-thick die when they are stressed by 1.0 A at 100 ̊C. However, it decreased significantly to 0.6 h for joints with a 60-μm-thick die. ► The die area has a considerable influence on the electromigration failure time. The electromigration failure time decreases as the die area decreases. ► Solder joints with a thinner die or a smaller area has a higher Joule heating effect, which results in a shorter electromigration lifetime.