کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7924420 | 1512277 | 2017 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron paramagnetic resonance study of Ce doped partially stabilized ZrO2 crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZrO2 (PSZ) solid solutions crystals stabilized with yttrium and cerium oxides have been studied using electron paramagnetic resonance (EPR) in the X and Q ranges. Zr3+ have been observed centers in the as-annealed ZrO2 crystals stabilized only by yttrium oxide (2.8Â mol% Y2O3). Another type of paramagnetic-O-centers appear as a result of CeO2 addition to ZrO2 crystals along with yttrium oxide. To estimate the concentration of Ce3+ ions in PZS crystals, we recorded the EPR spectra in the presence of a reference at 7Â K. Paramagnetic Ce3+ ions have been identified and their relative amount in the PSZ crystals before and after high-temperature heat treatment has been assessed. Annealing in air leads decreases the concentration of Ce3+ ions for all the test compositions and changes the color of the crystals from red to white. After annealing of the sample 2.0Y0.8Ce3Zr, the amount of paramagnetic Ce3+ ions decreased approximately twofold. Paramagnetic centers from Ce3+ have not been detected in the specimen with a low cerium content of 0.1Â mol% after annealing which indicates the complete transition of Ce3+ to the Ce4+ state. We show that the forming cerium paramagnetic centers are bound by strong exchange interactions. No angular dependence of the EPR lines of the paramagnetic Ce3+ cations on the applied external magnetic field has been observed. Probable origin of the absence of angular dependence is that the impurity rare-earth ions are located close to one another, forming impurity clusters with an effective spin of Seff=1/2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Modern Electronic Materials - Volume 3, Issue 3, September 2017, Pages 95-98
Journal: Modern Electronic Materials - Volume 3, Issue 3, September 2017, Pages 95-98
نویسندگان
Mikhail Ð. Borik, Rushana Ð. Eremina, Elena Ð. Lomonova, Valentina Ð. Myzina, Vyacheslav V. Osiko, Ilshat I. Fazlizhanov, Vladimir A. Shustov, Ivan V. Yatsyk,