کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7924458 | 1512282 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111) plane) of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5Ã1013 cmâ3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cmâ2. Deep-level transient spectroscopy (DLTS) was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78-290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to â19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150-260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150-260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ecâ(0.5±0.02) eV and an electron capture cross section of ~4Ã10-13 cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Modern Electronic Materials - Volume 2, Issue 2, June 2016, Pages 48-50
Journal: Modern Electronic Materials - Volume 2, Issue 2, June 2016, Pages 48-50
نویسندگان
Nikolai A. Poklonski, Nikolay I. Gorbachuk, Sergey V. Shpakovski, Viktor A. Filipenia, Arkady S. Turtsevich, Sergey V. Shvedov, Nha Vo Quang, Nguyen Thi Thanh Binh, Vladimir A. Skuratov, Andreas D. Wieck,