| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 7925861 | 1512510 | 2018 | 7 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												High-efficiency AlxGa1âxAs/GaAs cathode for photon-enhanced thermionic emission solar energy converters
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													مواد الکترونیکی، نوری و مغناطیسی
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												A theoretical emission model for AlxGa1âxAs/GaAs cathode with complex structure based on photon-enhanced thermionic emission is developed by utilizing one-dimensional steady-state continuity equations. The cathode structure comprises a graded-composition AlxGa1âxAs window layer and an exponential-doping GaAs absorber layer. In the deduced model, the physical properties changing with the Al composition are taken into consideration. Simulated current-voltage characteristics are presented and some important factors affecting the conversion efficiency are also illustrated. Compared with the graded-composition and uniform-doping cathode structure, and the uniform-composition and uniform-doping cathode structure, the graded-composition and exponential-doping cathode structure can effectively improve the conversion efficiency, which is ascribed to the twofold built-in electric fields. More strikingly, this graded bandgap structure is especially suitable for photon-enhanced thermionic emission devices since a higher conversion efficiency can be achieved at a lower temperature.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 413, 15 April 2018, Pages 1-7
											Journal: Optics Communications - Volume 413, 15 April 2018, Pages 1-7
نویسندگان
												Cheng Feng, Yijun Zhang, Yunsheng Qian, Ziheng Wang, Jian Liu, Benkang Chang, Feng Shi, Gangcheng Jiao,