کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7928087 | 1512552 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE](/preview/png/7928087.png)
چکیده انگلیسی
The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ~1.5Â V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565Â nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 371, 15 July 2016, Pages 128-131
Journal: Optics Communications - Volume 371, 15 July 2016, Pages 128-131
نویسندگان
Yang Zhao, Hui Wang, Shiwei Zhuang, Guoguang Wu, Jiyan Leng, Wancheng Li, Fubin Gao, Baolin Zhang, Guotong Du,