Plasma resonances effect in terahertz modulator based on double graphene layer

A modulator of terahertz radiation based on a double graphene-layer (GL) heterostructure utilizing the variation of the GL absorption and the resonant excitation of plasma oscillations is proposed. The dynamic operation and the modulation properties are substantiated using the developed device model. It is shown that the excitation of plasma oscillations in double GL structure can bring about the resonant increase of the modulation depth when the modulation frequency approaches the resonant plasma frequency. In addition, the modulation depth exhibits a sharp maximum whose position corresponds to the plasma resonance. This opens up the possibility to use the double-GL structures for effective modulation of THz radiation.