کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7932515 | 1512614 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evaluation of chemical cleaning for Ga1âxAlxAs photocathode by spectral response
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The spectral response has been used to evaluate the chemical cleaning for Ga1âxAlxAs photocathode by an on-line spectral response measurement system. The spectral response curves of Ga1âxAlxAs photocathodes treated by different chemical cleaning methods are measured and analyzed in detail. We use the quantum efficiency formulas to fit the experimental curves transforming from the spectral response curves, and obtain the related performance parameters such as the surface electron escape probability, the back-interface recombination velocity, the electron diffusion length, and the thickness of the etching GaAs layer. The results show that the GaAs photocathode cleaned by the HF solution could obtain a good photoemission effect, while the Ga0.37Al0.63As photocathode could be well cleaned by the solution of sulfuric acid and hydrogen peroxide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 309, 15 November 2013, Pages 323-327
Journal: Optics Communications - Volume 309, 15 November 2013, Pages 323-327
نویسندگان
Xinlong Chen, Benkang Chang, Jing Zhao, Guanghui Hao, Muchun Jin, Yuan Xu,