کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7963276 | 1514142 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure evolution of T91 irradiated in the BOR60 fast reactor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
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چکیده انگلیسی
Microstructures of T91 neutron irradiated in the BOR60 reactor at five temperatures between 376â¯Â°C and 524â¯Â°C to doses between 15.4 and 35.1 dpa were characterized using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), and atom probe tomography (APT). Type a<100> dislocation loops were observed at 376-415â¯Â°C and network dislocations dominated at 460â¯Â°C and 524â¯Â°C. Cavities appeared in a bimodal distribution with a high density of small bubbles less than 2â¯nmâ¯at irradiation temperatures between 376â¯Â°C and 415â¯Â°C. Small bubbles were also observed at 460â¯Â°C and 524â¯Â°C but cavities greater than 2â¯nm were absent. Enrichment of Cr, Ni, and Si at the grain boundary was observed at all irradiation temperatures. Radiation-induced segregation (RIS) of Cr, Ni and Si appeared to saturate at 17.1 dpa and 376â¯Â°C. The temperature dependence of RIS of Cr, Ni and Si at the grain boundary, which showed a peak Cr enrichment temperature of 460â¯Â°C and a lower peak Ni and Si enrichment temperature of â¼400â¯Â°C, was consistent with observations of RIS of Cr in proton irradiated T91, suggesting that the same RIS mechanism may also apply to BOR60 irradiated T91. G-phase and Cu-rich precipitates were observed at 376-415â¯Â°C but were absent at 460â¯Â°C and 524â¯Â°C. The absence of G-phase at 524â¯Â°C could be related to the minimal segregation of Ni and Si in that condition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 504, June 2018, Pages 122-134
Journal: Journal of Nuclear Materials - Volume 504, June 2018, Pages 122-134
نویسندگان
Z. Jiao, S. Taller, K. Field, G. Yeli, M.P. Moody, G.S. Was,