کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7963304 1514144 2018 37 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microstructure and hardness evolution of nanochannel W films irradiated by helium at high temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
Microstructure and hardness evolution of nanochannel W films irradiated by helium at high temperature
چکیده انگلیسی
Plasma facing materials (PFMs) face one of the most serious challenges in fusion reactors, including unprecedented harsh environment such as 14.1 MeV neutron and transmutation gas irradiation at high temperature. Tungsten (W) is considered to be one of the most promising PFM, however, virtually insolubility of helium (He) in W causes new material issues such as He bubbles and W “fuzz” microstructure. In our previous studies, we presented a new strategy using nanochannel structure designed in the W film to increase the releasing of He atoms and thus to minimize the He nucleation and “fuzz” formation behavior. In this work, we report the further study on the diffusion of He atoms in the nanochannel W films irradiated at a high temperature of 600 °C. More specifically, the temperature influences on the formation and growth of He bubbles, the lattice swelling, and the mechanical properties of the nanochannel W films were investigated. Compared with the bulk W, the nanochannel W films possessed smaller bubble size and lower bubble areal density, indicating that noticeable amounts of He atoms have been released out along the nanochannels during the high temperature irradiations. Thus, with lower He concentration in the nanochannel W films, the formation of the bubble superlattice is delayed, which suppresses the lattice swelling and reduces hardening. These aspects indicate the nanochannel W films have better radiation resistance even at high temperature irradiations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 502, 15 April 2018, Pages 132-140
نویسندگان
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