کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7963631 | 1514147 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal spike response and irradiation-damage evolution of a defective YAlO3 crystal to electronic excitation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal spike response and irradiation-damage evolution of a defective YAlO3 crystal to electronic excitation Thermal spike response and irradiation-damage evolution of a defective YAlO3 crystal to electronic excitation](/preview/png/7963631.png)
چکیده انگلیسی
Understanding the mechanism of ion-solid interactions and the responses of materials to energetic ion irradiation is fundamentally important to study the irradiation-damage behaviors and evaluate the irradiation-damage tolerances of functional materials working in artificial and natural radiation environments. In this work, an approach utilizing low- and high-energy ion irradiation is utilized to study the coupling effect between nuclear collision and electronic excitation related to an ion-irradiation-induced damage event. Microstructural analysis shows that, compared to the damage-free crystal, electronic excitation induces more considerable irradiation damage in the nuclear-collision-damaged crystal. Utilizing the inelastic thermal spike model, the evolution of the lattice temperature is calculated, revealing that, compared to the damage-free crystal, the local energy diffusion in the nuclear-collision-damaged crystal is suppressed and the irradiation-damage level is increased. This should be attributed to the decrease of the thermal conductivity and increase of the electron-phonon coupling in the nuclear-collision-damaged region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 499, February 2018, Pages 312-316
Journal: Journal of Nuclear Materials - Volume 499, February 2018, Pages 312-316
نویسندگان
Yong Liu, Qing Huang, Haizhou Xue, Miguel L. Crespillo, Peng Liu, Xuelin Wang,