Recovery temperatures of defects in tungsten created by self-implantation

The recovery of radiation defects in recrystallized tungsten was studied in the temperature range 400-1150 K. The defects were created by 20 MeV tungsten ions irradiation at room temperature to a maximum damage level of 0.9 dpa. The samples were then annealed to temperatures of 400-1150 K for 1 hour in order to anneal the created defects. After annealing the remaining defects were decorated with D by exposing them to a low-temperature ECR-plasma at 400 K to a fluence of 1 × 1025 D/m2. Deuterium was detected by nuclear reaction analysis and temperature programmed desorption. Annealing of defects is observed already at slightly elevated temperatures. At 820 K about 50% of the initial defects were annealed, while still about 30% of the initial defects were present after annealing at 1150 K.