Irradiation-induced microstructural evolution and swelling of 3C-SiC

Interplanar spacing information of single crystal SiC was obtained from synchrotron XRD radial scan measurements. Irradiation-induced volume swelling at 400-1350 °C was measured, and the anisotropic (a = b < c) swelling behavior of SiC was confirmed. In addition, humps on the right side of SiC (0 0 2) were observed, which suggested that C+/Si+-Si〈1 0 0〉 and/or C+/Si+-C〈1 0 0〉 dumbbells gave rise to diffuse scattering.