کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7987700 | 1515414 | 2016 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and low-energy electron microscopy characterizations of graphene and hexagonal boron nitride
ترجمه فارسی عنوان
مشخصه های میکروسکوپ الکترونی رشد و انرژی کم گرافیتی و هیدروژنی نیترید بور
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کلمات کلیدی
گرافین، نیترید بور، شش ضلعی، مواد دو بعدی، میکروسکوپ الکترونی کم انرژی، تخمیر بخار شیمیایی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
چکیده انگلیسی
Graphene and related two-dimensional (2D) materials are attracting huge attention due to their wide-range potential applications. Because large-scale, high-quality 2D crystals are prerequisites for many of the applications, crystal growth of 2D materials has been intensively studied. We have also been conducting research to understand the growth mechanism of 2D materials and have been developing growth techniques of high-quality materials based on the understandings, in which detailed structural characterizations using low-energy electron microscopy (LEEM) have played essential roles. In this paper, we explain the principles of obtaining various structural features using LEEM, and then we review the status of our current understanding on the growth of graphene and hexagonal boron nitride.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Crystal Growth and Characterization of Materials - Volume 62, Issue 2, June 2016, Pages 155-176
Journal: Progress in Crystal Growth and Characterization of Materials - Volume 62, Issue 2, June 2016, Pages 155-176
نویسندگان
H. Hibino, S. Wang, C.M. Orofeo, H. Kageshima,