کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7987768 | 1515523 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anisotropic electronic heat capacity and electrical conductivity of monolayer biased impurity-infected black phosphorus
ترجمه فارسی عنوان
ظرفیت حرارتی الکتریکی و هدایت الکتریکی فسفر سیاه آلوده به ناخالصی متمایل به یکنواخت
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
ناامیدی، عملکرد سبز، ظرفیت الکترونیکی، رسانایی الکتریکی، انرژی فرمی، فسفر سیاه، تقریبی متولد شد
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
چکیده انگلیسی
We theoretically investigate the electron-impurity interaction effects on the direction-dependent electronic heat capacity (EHC) and electrical conductivity (EC) of single-layer biased black phosphorus (BP) as a function of temperature. By means of the Born approximation besides the continuum approximation of the tight-binding Hamiltonian and the Green's function approach, we obtain a significant difference in the xâ and yâdirection EHC and EC. Inherent higher value of the yâdirection density of states around the Fermi energy in the valence band exhibits interesting anisotropic EHC and EC results. The Schottky anomaly in EHC quantity decreases slightly with impurity in xâdirection of unbiased BP, whereas there is no change in yâdirection. On the other hand, the probability of transition between energy levels provided by the decreased critical temperature decreases with impurity in xâdirection EC and similarly there is no alteration in yâdirection EC. We show that the Drude weight in EC appears with impurity in both directions. Furthermore, we study the influence of bias voltage on the EHC and EC of impurity-infected BP. Our findings showcase the increased (decreased) EHC (EC) of disordered BP and disappeared the Drude weight of EC in the presence of bias voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 280, October 2018, Pages 39-44
Journal: Solid State Communications - Volume 280, October 2018, Pages 39-44
نویسندگان
H.D. Bui, Mohsen Yarmohammadi,