کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990399 | 1516128 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-hole mobility Si1-xGex (0.1 ⤠x ⤠1) on an insulator formed by advanced solid-phase crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The grain size and hole mobility of polycrystalline Si1-xGex thin films formed on glass by solid-phase crystallization were significantly improved after preparing the amorphous precursors by heating the substrate. By just controlling the deposition temperature of the precursors (50-350â¯Â°C) for each SiGe composition, the grain size reached over 2â¯Î¼m across the whole composition range. Reflecting the enlargement of the grain size, the hole mobility values were improved by approximately one order of magnitude. These values are comparable to those of single-crystal SiGe formed by Ge condensation and are the highest among SiGe on insulators synthesized at low temperature (<900â¯Â°C). The SiGe on insulator technology obtained in this study will greatly contribute to the development of SiGe-based electronic and optical devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 766, 25 October 2018, Pages 417-420
Journal: Journal of Alloys and Compounds - Volume 766, 25 October 2018, Pages 417-420
نویسندگان
D. Takahara, R. Yoshimine, T. Suemasu, K. Toko,