کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990690 | 1516130 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DC electrical conductivity and switching phenomena of amorphous Te81Ge15Bi4 films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Thin films of Te81Ge15Bi4 were prepared from its bulk glass by thermal evaporation method. Amorphous structure of the prepared films was examined by X-ray diffraction (XRD). Differential thermal analysis (DTA) was carried out to obtain the glass transition temperature Tg. DC conductivity Ïdc was studied as a function of temperature below Tg in the range (303-393â¯K) and in thickness range (143-721â¯nm). The results obtained are based on the model of Mott and Davis. The obtained films were found to exhibit memory type of electrical switching behaviour. The threshold switching voltage Vth is found to be reduced exponentially with temperature and enhanced with the thickness of the film in the considered range. The obtained results of the switching behaviour are interpreted according to the electrothermal model motivated by Joule heating.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 764, 5 October 2018, Pages 498-504
Journal: Journal of Alloys and Compounds - Volume 764, 5 October 2018, Pages 498-504
نویسندگان
M.A. Afifi, E.G. El-Metwally, N.A. Hegab, M. Mostfa,