کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990898 | 1516132 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band gap engineering in SnO2 by Pb doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
There is a growing need to lower the band gap of the transparent conductive tin oxide (SnO2) in view of its potential application in photo-electronic technology. Here, we systematically investigated the effect of Pb doping on lowering the band gap of SnO2. We demonstrate a significant reduction in its band gap to as much as â¼0.8â¯eV (3.64â¯eV-2.87â¯eV) upon 15% Pb doping. The observed band gap tunability with Pb-incorporation provides a direct and efficient approach to effectively tailor the band gap and is expected to open up applications in emerging oxide opto-electronic and energy applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 762, 25 September 2018, Pages 16-20
Journal: Journal of Alloys and Compounds - Volume 762, 25 September 2018, Pages 16-20
نویسندگان
S.N. Sarangi, Gopal K. Pradhan, D. Samal,