Structural and electrical properties of cation and anion doped BiScO3-PbTiO3 ceramics

Different amounts of MgF2 were substituted in (1-x)BiScO3-xPbTiO3 (BS-PT) at x = 0.64. Magnesium as an acceptor was supposed to be incorporated at B-site and fluorine at anionic sites. Morphotrophic phase boundary (MPB) was found at 0.5% MgF2 doping where tetragonal and monoclinic phases coexisted in almost equal proportion. Tolerance factor as well as cationic displacements played important role in enhancing Tc. MgF2 doping enhanced Curie temperature (Tc) and electromechanical coupling factor (kp) up to 490 °C and 0.66, respectively. Grain size and porosity increased with doping amount due to fluorine. The dielectric loss was suppressed with MgF2 addition at room temperature.