کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7991416 | 1516141 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of lead selenide thin film photodiode for near-infrared detection via O2-plasma treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of lead selenide thin film photodiode for near-infrared detection via O2-plasma treatment Fabrication of lead selenide thin film photodiode for near-infrared detection via O2-plasma treatment](/preview/png/7991416.png)
چکیده انگلیسی
By creating acceptor states in band gap of lead selenide (PbSe), oxygen can act as an effective p-type dopant and eventually invert the conductivity from n-type to p-type. Fabrication of PbSe Photodiode was thus realized by introducing oxygen atoms into PbSe thin films via O2-plasma in our research. Typical diode characteristics and splendid photosensitivity was achieved in the as-fabricated PbSe photodiode. The detectivity was determined as 1.2â¯Ãâ¯1011â¯cmâ¯Hz1/2/W, 1.2â¯Ãâ¯1011â¯cmâ¯Hz1/2/W and 2.2â¯Ãâ¯1010â¯cmâ¯Hz1/2/W at forward bias, reverse bias and zero bias, respectively. With a response time of millisecond level, great dynamic performance was achieved via this novel fabrication process. Dimension of oxygen-doped region as well as material properties were also characterized in this research.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 753, 15 July 2018, Pages 6-10
Journal: Journal of Alloys and Compounds - Volume 753, 15 July 2018, Pages 6-10
نویسندگان
Y.X. Ren, T.J. Dai, W.B. Luo, X.Z. Liu,