کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7992285 | 1516146 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Multi-component AlCrTaTiZrMo-nitride film with high diffusion resistance in copper metallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, a multi-component AlCrTaTiZrMo-nitride film with a total thickness of about 10â¯nm have been investigated as a diffusion barrier layer for copper metallization. To achieve the diffusion barrier characteristic between Cu and Si, the Cu/AlCrTaTiZrMo-nitride/Si structure were annealed at temperatures from 700â¯Â°C to 900â¯Â°C for 1â¯h in high vacuum. Under annealing at high temperature of 800â¯Â°C, the layer still remained amorphous with nanocrystalline features, effectively retarded the interdiffusion between Cu and Si without the formation of any Cu-silicides. After annealing at 900â¯Â°C, Cu-silicides compound formed with the appearance of island-like surface, revealing that the interdiffusion occurred between Cu and Si. The findings indicate that HEA-nitride layer have excellent diffusion barrier performance before annealing at 900â¯Â°C. Its high diffusion barrier performance and thermal stability are probably attributable to the amorphous structure with nano-crystalline features, the simple solid solution structure, the multiple-element effects, and the high stacking density without rapid diffusion path.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 748, 5 June 2018, Pages 258-264
Journal: Journal of Alloys and Compounds - Volume 748, 5 June 2018, Pages 258-264
نویسندگان
Rongbin Li, Bangwei Qiao, Hailong Shang, Jing Zhang, Chunxia Jiang, Weiwei Zhang,