کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7992311 | 1516147 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hydrogen diffusion in GaN:Mg and GaN:Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Theoretical predictions of high hydrogen diffusivity in p-GaN layers were confirmed in many experiments for samples grown by Metalorganic Vapor Phase Epitaxy (MOVPE). In this technology, p-GaN has a high concentration of hydrogen incorporated during the growth. In this work, we confirm that also in hydrogen-free p-GaN grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE) the hydrogen diffusion during H2+NH3 annealing is much higher than in n-type layers. Additionally, we have compared hydrogen diffusion for samples of different dislocation density and we have found no effect of these defects. The photoluminescence of the PAMBE-grown p-GaN exhibited the following change after annealing in H2+NH3 atmosphere: the blue luminescence decrease and yellow luminescence increase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 747, 30 May 2018, Pages 354-358
Journal: Journal of Alloys and Compounds - Volume 747, 30 May 2018, Pages 354-358
نویسندگان
Robert Czernecki, Ewa Grzanka, Rafal Jakiela, Szymon Grzanka, Czeslaw Skierbiszewski, Henryk Turski, Piotr Perlin, Tadek Suski, Konstanty Donimirski, Mike Leszczynski,