کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7992378 | 1516147 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 747, 30 May 2018, Pages 505-510
Journal: Journal of Alloys and Compounds - Volume 747, 30 May 2018, Pages 505-510
نویسندگان
Seung Wook Ryu, Jeong-Gyu Song, Hyun Gu Kim, Hyungjun Kim, Han-Bo-Ram Lee,