کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7992833 | 1516150 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of extremely low temperature processed oxide thin film transistors via atmospheric steam reforming treatment: Interface, surface, film curing
ترجمه فارسی عنوان
ترانزیستورهای نازک فیلم اکسید فرایند با فرایند بسیار کم از طریق پردازش بخار اصلاح شده با بخار جوی: رابط، سطح،
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کلمات کلیدی
دمای پایین، درمان بخار، تشخیص بهبودی، مواد اکسید، الکترونیک انعطاف پذیر،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
چکیده انگلیسی
We have developed an “atmospheric steam reforming treatment” technique to obtain high-performance flexible amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) for applications in wearable/imperceptible electronics. The oxide TFTs, using as-grown a-IGZO with low-temperature sputtering and atomic layer deposition of Al2O3, showed unstable electrical behavior and poor transfer characteristics, which originated from a highly defective channel, gate insulator, and channel/gate insulator interface. Surprisingly, stable a-IGZO TFTs were obtained by atmospheric steam reforming treatment at an extremely low temperature (â¼90â¯Â°C), and they exhibited good TFT performance with high field-effect mobility (13.3â¯cm2/V·s), high on/off ratio (4.5â¯Ãâ¯108), and small SS value (0.23â¯V/dec). Despite the extremely low thermal budget, this steam treatment has a positive effect on the TFT characteristics because of an effective oxygen diffusion source, thereby resulting in successful healing of oxygen-related defects in the bulk oxide channel, channel/gate insulator interface, and gate insulator. Finally, by carrying out the atmospheric steam treatment at an extremely low temperature, we successfully fabricated ultrathin flexible a-IGZO TFTs with good electrical performance from a vacuum deposition system at the maximum process temperatures of 100-150â¯Â°C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 744, 5 May 2018, Pages 23-33
Journal: Journal of Alloys and Compounds - Volume 744, 5 May 2018, Pages 23-33
نویسندگان
Won Jun Kang, Cheol Hyoun Ahn, Kyung Su Kim, Sung Hyeon Jung, Sung Woon Cho, Hyung Koun Cho, Yunseok Kim,