کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7992833 1516150 2018 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of extremely low temperature processed oxide thin film transistors via atmospheric steam reforming treatment: Interface, surface, film curing
ترجمه فارسی عنوان
ترانزیستورهای نازک فیلم اکسید فرایند با فرایند بسیار کم از طریق پردازش بخار اصلاح شده با بخار جوی: رابط، سطح،
کلمات کلیدی
دمای پایین، درمان بخار، تشخیص بهبودی، مواد اکسید، الکترونیک انعطاف پذیر،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
چکیده انگلیسی
We have developed an “atmospheric steam reforming treatment” technique to obtain high-performance flexible amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) for applications in wearable/imperceptible electronics. The oxide TFTs, using as-grown a-IGZO with low-temperature sputtering and atomic layer deposition of Al2O3, showed unstable electrical behavior and poor transfer characteristics, which originated from a highly defective channel, gate insulator, and channel/gate insulator interface. Surprisingly, stable a-IGZO TFTs were obtained by atmospheric steam reforming treatment at an extremely low temperature (∼90 °C), and they exhibited good TFT performance with high field-effect mobility (13.3 cm2/V·s), high on/off ratio (4.5 × 108), and small SS value (0.23 V/dec). Despite the extremely low thermal budget, this steam treatment has a positive effect on the TFT characteristics because of an effective oxygen diffusion source, thereby resulting in successful healing of oxygen-related defects in the bulk oxide channel, channel/gate insulator interface, and gate insulator. Finally, by carrying out the atmospheric steam treatment at an extremely low temperature, we successfully fabricated ultrathin flexible a-IGZO TFTs with good electrical performance from a vacuum deposition system at the maximum process temperatures of 100-150 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 744, 5 May 2018, Pages 23-33
نویسندگان
, , , , , , ,